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FGH40N60SFDTU Биполярный транзистор 80A 600V (TO-247-3)

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FGH40N60SFDTU Биполярный транзистор 80A 600V (TO-247-3)
FGH40N60SFDTU Биполярный транзистор 80A 600V (TO-247-3)
FGH40N60SFDTU Биполярный транзистор 80A 600V (TO-247-3)
FGH40N60SFDTU Биполярный транзистор 80A 600V (TO-247-3)
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FGH40N60SFDTU Биполярный транзистор 80A 600V (TO-247-3)


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FGH40N60SFDTU Биполярный транзистор 80A 600V (TO-247-3)


Channel Type N
Maximum Collector Emitter Voltage 600 V
Maximum Continuous Collector Current 80 A
Maximum Gate Emitter Voltage ±20V
Maximum Operating Temperature +150 °C
Maximum Power Dissipation 290 W
Minimum Operating Temperature -55 °C
Mounting Type
TO-247
Pin Count 3
Transistor Configuration Single
Brand: onsemi/Fairchild
Collector- Emitter Voltage VCEO Max: 600 V
Collector-Emitter Saturation Voltage: 1.9 V
Configuration: Single
Continuous Collector Current at 25 C: 80 A
Factory Pack Quantity: Factory Pack Quantity: 30
Gate-Emitter Leakage Current: +/-400 nA
Manufacturer: onsemi
Maximum Gate Emitter Voltage: -20 V, +20 V
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style:
TO-247
Packaging: Tube
Pd - Power Dissipation: 349 W
Product Category: IGBT Transistors
Product Type: IGBT Transistors
Series: FGH40N60SMD
Subcategory: IGBTs
Technology: Si
Вес брутто 7.22
Тип IGBT транзистор 600В, 80А
Транспортная упаковка: размер/кол-во 60*41*41/900
Упаковка TUBE, 30 шт.
Base Part Number FGH40N60
Current - Collector (Ic) (Max) 80A
Current - Collector Pulsed (Icm) 120A
Gate Charge 119nC
IGBT Type Field Stop
Input Type Standard
Manufacturer ON Semiconductor
Operating Temperature -55В°C ~ 175В°C(TJ)
Package / Case TO-247-3
Packaging Tube
Part Status Active
Power - Max 349W
Reverse Recovery Time (trr) 36ns
Series -
Supplier Device Package TO-247-3
Switching Energy 870ВµJ(on), 260ВµJ(off)
Td (on/off) @ 25В°C 12ns/92ns
Test Condition 400V, 40A, 6Ohm, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 40A
Channel Type N
Maximum Collector Emitter Voltage 600 V
Maximum Continuous Collector Current 80 A
Maximum Gate Emitter Voltage ±20V
Maximum Operating Temperature +150 °C
Maximum Power Dissipation 290 W
Minimum Operating Temperature -55 °C
Mounting Type TO-247
Pin Count 3
Transistor Configuration Single
Brand: onsemi/Fairchild
Collector- Emitter Voltage VCEO Max: 600 V
Collector-Emitter Saturation Voltage: 1.9 V
Configuration: Single
Continuous Collector Current at 25 C: 80 A
Factory Pack Quantity: Factory Pack Quantity: 30
Gate-Emitter Leakage Current: +/-400 nA
Manufacturer: onsemi
Maximum Gate Emitter Voltage: -20 V, +20 V
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: TO-247
Packaging: Tube
Pd - Power Dissipation: 349 W
Product Category: IGBT Transistors
Product Type: IGBT Transistors
Series: FGH40N60SMD
Subcategory: IGBTs
Technology: Si
Вес брутто 7.22
Тип IGBT транзистор 600В, 80А
Транспортная упаковка: размер/кол-во 60*41*41/900
Упаковка TUBE, 30 шт.
Base Part Number FGH40N60
Current - Collector (Ic) (Max) 80A
Current - Collector Pulsed (Icm) 120A
Gate Charge 119nC
IGBT Type Field Stop
Input Type Standard
Manufacturer ON Semiconductor
Operating Temperature -55В°C ~ 175В°C(TJ)
Package / Case TO-247-3
Packaging Tube
Part Status Active
Power - Max 349W
Reverse Recovery Time (trr) 36ns
Series -
Supplier Device Package TO-247-3
Switching Energy 870ВµJ(on), 260ВµJ(off)
Td (on/off) @ 25В°C 12ns/92ns
Test Condition 400V, 40A, 6Ohm, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 40A
Voltage - Collector Emitter Breakdown (Max) 600V